![]() ![]() As a result of this depletion region grows in size thereby reducing the effective width of the channel.ĥ. This in turn increases the reverse bias voltage across the gate source junction. It is because of the fact that there is an increase in V ds. Here the drain current is increased slowly as compared to ohmic region.Ĥ. I d increases with increase in drain to source voltage. This shows that FET behaves like an ordinary resistor. When V ds is applied and it is increasing the drain current I d also increases linearly up to knee point.Ģ. In order to explain typical drain characteristics let us consider the curve with V gs= 0 V.ġ. There are two important characteristics of a JFET.ĭrain characteristics show the relation between the drain to source voltage V ds and drain current I d. ![]() The family of curves that shows the relation between current and voltage are known as characteristic curves. ![]()
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